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Product Summary
The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash
Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby
current is less than 100 μA.
To allow for simple in-system reprogrammability, the AT49F010/HF010 does not require high input voltages for programming. Five-volt-only commands determine the
read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is performed by erasing the entire 1 megabit of memory and then programming on a byte
by byte basis. The byte programming time is a fast 50 μs. The end of a program cycle
can be optionally detected by the DATA polling feature. Once the end of a byte proram cycle has been detected, a new access for a read or
program can begin. The typical number of program and
erase cycles is in excess of 10,000 cycle
Parametrics
The AT49F010/HF010 is accessed like an
EPROM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put
in the high impedance state whenever CE or OE is high.
This dual-line control gives designers flexibility in preventing bus contention
Features
? Single Voltage Operation
- 5V Read
- 5V Reprogramming
? Fast Read Access Time - 45 ns
? Internal Program Control and Timer
? 8K bytes Boot Block With Lockout
? Fast Erase Cycle Time - 10 seconds
? Byte By Byte Programming - 10 μs/Byte
? Hardware Data Protection
? DATA Polling For End Of Program Detection
? Low Power Dissipation
- 30 mA Active Current
- 100 μA CMOS Standby Current
? Typical 10,000 Write Cycles
Diagrams
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